radar pulsed power transistor 80w, 1.2-1.4 ghz, 150s pulse, 10% duty m/a-com products released, 30 may 07 PH1214-80M 1 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ? npn silicon microwav e power transistors ? common base configuration ? broadband class c operation ? high efficiency inter-digitized geometry ? diffused emitter ballasting resistors ? gold metallization system ? internal input and output impedance matching ? hermetic metal/ceramic package ? rohs compliant outline drawing electrical specifications: t c = 25 5c ( room ambient ) parameter test conditions frequency symbol min max units collector-emitter breakdown voltage i c = 35ma bv ces 70 - v collector-emitter leakage current v ce = 40v i ces - 3.5 ma thermal resistance vcc = 40v, pin = 13w f = 1.2, 1.3, 1.4 ghz r th(jc) - 0.8 c/w output power vcc = 40v, pin = 13w f = 1.2, 1.3, 1.4 ghz p out 80 - w power gain vcc = 40v, pin = 13w f = 1.2, 1.3, 1.4 ghz g p 7.9 - db collector efficiency vcc = 40v, pin = 13w f = 1.2, 1.3, 1.4 ghz c 50 - % input return loss vcc = 40v, pin = 13w f = 1.2, 1.3, 1.4 ghz rl - -9 db load mismatch tolerance vcc = 40v, pin = 13w f = 1.2, 1.3, 1.4 ghz vswr-t - 3:1 - load mismatch stability vcc = 40v, pin = 13w f = 1.2, 1.3, 1.4 ghz vswr-s - 1.5:1 - absolute maximum ratings at 25c parameter symbol rating units collector-emitter voltage v ces 70 v emitter-base voltage v ebo 3.0 v collector current (peak) i c 6.4 a power dissipation @ +25c p tot 220 w storage temperature t stg -65 to +200 c junction temperature t j 200 c
radar pulsed power transistor 80w, 1.2-1.4 ghz, 150s pulse, 10% duty m/a-com products released, 30 may 07 PH1214-80M 2 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical rf performance freq. (ghz) pin (w) pout (w) gain (db) ic (a) eff (%) rl (db) vswr-s (1.5:1) vswr-t (3:1) 1.2 13 106 9.13 4.83 55.1 -15.4 s p 1.3 13 98 8.78 4.66 52.7 -15.5 s p 1.4 13 102 8.96 4.61 55.6 -14.9 s p f (ghz) z if ( ? ) z of ( ? ) 1.2 9.4 - j4.5 7.0 - j2.8 1.3 8.3 - j2.8 4.5 - j3.2 1.4 7.9 - j1.3 3.0 + j2.1 rf test fixture impedance gain vs. frequency collector efficiency vs. frequency 7.5 7.9 8.3 8.7 9.1 9.5 1.20 1.25 1.30 1.35 1.40 fr e q (ghz ) gain (db) 46 50 54 58 62 66 1.20 1.25 1.30 1.35 1.40 fr e q (ghz ) efficiency (%)
radar pulsed power transistor 80w, 1.2-1.4 ghz, 150s pulse, 10% duty m/a-com products released, 30 may 07 PH1214-80M 3 ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. test fixture circuit dimensions test fixture assembly
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